Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors

M. C. Chen*, S. H. Ku, C. T. Chan, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The impact of oxide soft breakdown location on threshold voltage hysteresis in a partially depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors, with an ultrathin oxide was investigated. In a drain-edge breakdown device, the excess holes resulting from band-to-band tunneling flow to the floating body cause threshold variation in drain bias switching. Whereas, in channel breakdown device, enhanced hysteresis is observed during gate bias switching because of increased valence band electron tunneling. The investigation reveal that softbreakdown effect is a reliable issue in silicon-on-insulator devices.

Original languageEnglish
Pages (from-to)2297-2300
Number of pages4
JournalJournal of Applied Physics
Volume96
Issue number4
DOIs
StatePublished - 15 Aug 2004

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