@inproceedings{7ec4ccb3f4d94f958d091eaac4165c15,
title = "Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs",
abstract = "The impact of soft breakdown location on Vt hysteresis in partially depleted SOI nMOSFETs with ultra-thin oxide (1.6 nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a channel breakdown MOSFET, excess holes attributed to valence electron tunneling flow to the floating body and thus cause Vt hysteresis in gate bias switching. In contrast, for a drain-edge breakdown device, enhanced Vt hysteresis is observed during drain bias switching because of increased band-to-band tunneling current.",
keywords = "Charge carrier processes, CMOS technology, Electric breakdown, Feedback, Hysteresis, Leakage current, MOSFET circuits, Silicon on insulator technology, Tunneling, Voltage",
author = "Chen, {M. C.} and Tsai, {C. W.} and Gu, {S. H.} and Ta-Hui Wang and Lu, {S. H.} and Lin, {S. W.} and Yang, {G. S.} and Chen, {J. K.} and Chien, {S. C.} and Loh, {Y. T.} and Liu, {F. T.}",
year = "2002",
month = jan,
day = "1",
doi = "10.1109/RELPHY.2002.996670",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "404--408",
booktitle = "2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual",
address = "United States",
note = "null ; Conference date: 07-04-2002 Through 11-04-2002",
}