Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs

M. C. Chen, C. W. Tsai, S. H. Gu, Ta-Hui Wang, S. H. Lu, S. W. Lin, G. S. Yang, J. K. Chen, S. C. Chien, Y. T. Loh, F. T. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The impact of soft breakdown location on Vt hysteresis in partially depleted SOI nMOSFETs with ultra-thin oxide (1.6 nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a channel breakdown MOSFET, excess holes attributed to valence electron tunneling flow to the floating body and thus cause Vt hysteresis in gate bias switching. In contrast, for a drain-edge breakdown device, enhanced Vt hysteresis is observed during drain bias switching because of increased band-to-band tunneling current.

Original languageEnglish
Title of host publication2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages404-408
Number of pages5
ISBN (Electronic)0780373529
DOIs
StatePublished - 1 Jan 2002
Event40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States
Duration: 7 Apr 200211 Apr 2002

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2002-January
ISSN (Print)1541-7026

Conference

Conference40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
CountryUnited States
CityDallas
Period7/04/0211/04/02

Keywords

  • Charge carrier processes
  • CMOS technology
  • Electric breakdown
  • Feedback
  • Hysteresis
  • Leakage current
  • MOSFET circuits
  • Silicon on insulator technology
  • Tunneling
  • Voltage

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