Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs

M. C. Chen, C. W. Tsai, S. H. Gu, Ta-Hui Wang, S. Huang Lu, S. W. Lin, G. S. Yang, J. K. Chen, S. C. Chien, Y. T. Loh, F. T. Liu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The impact of soft breakdown location on Vt hysteresis in partially depleted SOI nMOSFETs with ultra-thin oxide (1.6 nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a channel breakdown MOSFET, excess holes attributed to valence electron tunneling flow to the floating body and thus cause Vt hysteresis in gate bias switching. As a contrast, in a drain-edge breakdown device, enhanced Vt hysteresis is observed during drain bias switching because of increased band-to-band tunneling current.

Original languageEnglish
Pages (from-to)404-408
Number of pages5
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 2002

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