The impact of soft breakdown location on Vt hysteresis in partially depleted SOI nMOSFETs with ultra-thin oxide (1.6 nm) is investigated. Two breakdown enhanced hysteresis modes are identified. In a channel breakdown MOSFET, excess holes attributed to valence electron tunneling flow to the floating body and thus cause Vt hysteresis in gate bias switching. As a contrast, in a drain-edge breakdown device, enhanced Vt hysteresis is observed during drain bias switching because of increased band-to-band tunneling current.
|Number of pages||5|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|State||Published - 1 Jan 2002|