Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor

Sankalp Kumar Singh, Pragyey Kumar Kaushik, Ramesh Kumar Kakkerla, Ankur Gupta, Deepak Anandan, Venkatesan Nagarajan, Hung-Wei Yu, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This work presents a comprehensive study of small-signal parameters based on radio frequency (RF) data of a heterojunction tunnel field effect transistor (HJ-TFET). The TFET device shows excellent small-signal analog and RF performance. Numerical device simulations of the optimized HJ-TFET shows ION/IOFF ratio of ∼6 orders of magnitude. It is found that gate voltage dependency of HJ-TFET on the intrinsic parameters obtained from the non-quasi static (NQS) model differ from the conventional MOSFET due to band to band tunneling mechanism and inversion layer formation in the device. Based on this mechanism, the high frequency analog and RF performance of HJ-TFET were investigated using TCADand modeled usingNQS model, which was verified upto 100 GHz. The modeling results showed excellent agreement with the simulated small-signal parameters at multiple drain voltages (Vd). f

Original languageEnglish
Article number035004
JournalEngineering Research Express
Volume2
Issue number3
DOIs
StatePublished - Sep 2020

Keywords

  • Modeling
  • Non quasi static (NQS)
  • Radio-frequency (RF)
  • Small-signal parameters
  • Tunneling field-effect transistor (TFET)

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