Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor

Ya Chin King*, Chen-Ming Hu, Hiroshi Fujioka, Shiroo Kamohara

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A simulator using a coupled Schrödinger equation, Poisson equation and Fermi-Dirac statistics to analyze inversion layer quantization is shown to match the measured capacitance versus voltage data of thin oxide gate metal-on-insulator capacitance closely. The effects of bias voltage, oxide thickness and doping concentration on the charge centroid are presented. A simple empirical model for the alternating current charge centroid of the inversion layer is proposed. This model predicts the in-version layer capacitance or charge centroid in terms of Tox (oxide thickness), Vt (threshold voltage), and Vg (gate voltage) explicitly.

Original languageEnglish
Pages (from-to)3476-3478
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number26
DOIs
StatePublished - 1 Dec 1998

Fingerprint Dive into the research topics of 'Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor'. Together they form a unique fingerprint.

Cite this