Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate

Y. C. Lee, C. E. Lee, Tien-chang Lu, Hao-Chung Kuo, S. C. Wang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Small-scale GaN-based LEDs with a single electrode pad enjoying such properties as low cost, low series resistance, high efficiency and high yield were fabricated on a sapphire substrate by a novel and simple method. The devices present not only lower series resistance but higher light output power due to a specific n-contact design and better current spreading properties. Furthermore, higher ESD resistance (> -800 V at machine-mode operation) was demonstrated. The single-pad electrode of small-scale GaN-based LEDs has a chip size of 180 × 180 νm2, and showed a lower forward voltage of 3.15 V and 53.4% output power enhancement at 20 mA.

Original languageEnglish
Article number045013
Pages (from-to)1-5
Number of pages5
JournalSemiconductor Science and Technology
Volume23
Issue number4
DOIs
StatePublished - 1 Apr 2008

Fingerprint Dive into the research topics of 'Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate'. Together they form a unique fingerprint.

Cite this