Small angle x-ray scattering measurements of lithographic patterns with sidewall roughness from vertical standing waves

Chengqing Wang, Ronald L. Jones, Eric K. Lin, Wen Li Wu*, Leu-Jih Perng

*Corresponding author for this work

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

Small angle x-ray scattering (SAXS) measurements are used to quantify the wavelength and amplitude of the sidewall roughness in a lithographic line:space pattern due to vertical standing waves present during the photoresist exposure. Analytic equations are derived to model the x-ray scattering intensity and are used to determine the periodicity and amplitude of the standing wave roughness. The average periodicity, or pitch, and the linewidth were L=422±1 nm and w0 =148±1 nm. The period and amplitude of the standing wave roughness were λs =65±1 nm and As =3.0±0.5 nm. These results demonstrate the potential of SAXS measurements to quantify nondestructively and quantitatively dimensional deviations from an ideal structure.

Original languageEnglish
Article number193122
JournalApplied Physics Letters
Volume90
Issue number19
DOIs
StatePublished - 17 May 2007

Fingerprint Dive into the research topics of 'Small angle x-ray scattering measurements of lithographic patterns with sidewall roughness from vertical standing waves'. Together they form a unique fingerprint.

  • Cite this