Size tunable Ge quantum dot phototrasnsistors for optical interconnects with high figure of merits

Ming Hao Kuo, Chung Yen Chien, Po Hsiang Liao, Wei Ting Lai, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report a unique, CMOS approach for the inclusion of size-tunable (7-50-nm), spherical Ge quantum dots (QDs) into gate stacks of Si MOS transistors, through selective oxidation of SiGe pillars over the buffer layer of Si3N4 on top of the Si substrate. The Ge-QD MOS phototransistors feature extremely low dark current densities (Ioff ∼ 0.27 pA/μm2), high Ion/Ioff (>106), steep subthreshold swing (∼175 mV/dec at 300 K), superior external quantum efficiency (∼240%), and fast response time of 1.4ns under illumination of 850 nm, providing a core building block for high-performance Ge optical transducers for on-chip optical switches and transducers for Si-based optical interconnect applications. Most importantly, the detection wavelength of the Ge QD is tunable from near infrared to near ultraviolet by reducing the QD size from 50 to 7 nm, and the optimal photoresponsivity is tailored by the Ge QD size and the effective thickness of gate dielectrics.

Original languageEnglish
Title of host publication2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973750
DOIs
StatePublished - 3 Jun 2015
Event2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan
Duration: 27 Apr 201529 Apr 2015

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume2015-June
ISSN (Print)1930-8868

Conference

Conference2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
CountryTaiwan
CityHsinchu
Period27/04/1529/04/15

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