Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices

N. A. Shandyba; I. V. Panchenko; R. V. Tominov; V. A. Smirnov; M. I. Pelipenko; E. G. Zamburg; Ying-hao Chu

doi:10.1088/1742-6596/1124/8/081036

Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices

N. A. Shandyba, I. V. Panchenko, R. V. Tominov, V. A. Smirnov, M. I. Pelipenko, E. G. Zamburg, Ying-hao Chu

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 Mμ to 700.32±300.83 Mμ and low-resistance state (LRS) from 0.03±0.02 Mμ to 0.09±0.03 Mμ, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing.

Original language	English
Article number	081036
Journal	Journal of Physics: Conference Series
Volume	1124
DOIs	https://doi.org/10.1088/1742-6596/1124/8/081036
State	Published - 1 Jan 2018

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title = "Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices",

abstract = "Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 Mμ to 700.32±300.83 Mμ and low-resistance state (LRS) from 0.03±0.02 Mμ to 0.09±0.03 Mμ, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing.",

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AU - Shandyba, N. A.

AU - Panchenko, I. V.

AU - Tominov, R. V.

AU - Smirnov, V. A.

AU - Pelipenko, M. I.

AU - Zamburg, E. G.

AU - Chu, Ying-hao

PY - 2018/1/1

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N2 - Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 Mμ to 700.32±300.83 Mμ and low-resistance state (LRS) from 0.03±0.02 Mμ to 0.09±0.03 Mμ, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing.

AB - Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 Mμ to 700.32±300.83 Mμ and low-resistance state (LRS) from 0.03±0.02 Mμ to 0.09±0.03 Mμ, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing.

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