Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices

N. A. Shandyba, I. V. Panchenko, R. V. Tominov, V. A. Smirnov, M. I. Pelipenko, E. G. Zamburg, Ying-hao Chu

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 Mμ to 700.32±300.83 Mμ and low-resistance state (LRS) from 0.03±0.02 Mμ to 0.09±0.03 Mμ, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing.

Original languageEnglish
Article number081036
JournalJournal of Physics: Conference Series
Volume1124
DOIs
StatePublished - 1 Jan 2018

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