We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As + implantation to improve the device performance of MONOS CTF device. The TaN-[SiO 2-LaAlO 3]-[As +-implanted ZrON]-[LaAlO 3-SiO 2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 10 5 cycles under fast 100 μs and low ±16 V program/erase. The performance of As +-implanted ZrON is significantly better than that of stacked Si 3N 4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.
|Title of host publication||Physics and Technology of High-k Materials 9|
|Number of pages||12|
|State||Published - 1 Dec 2011|
|Event||9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States|
Duration: 10 Oct 2011 → 12 Oct 2011
|Conference||9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting|
|Period||10/10/11 → 12/10/11|