Size-dependent trapping effect in nano-dot non-volatile memory

Chung-Yong Tsai, C. H. Cheng, T. Y. Chang, K. Y. Chou, Albert Chin*, F. S. Yeh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report a flash memory using deep traps nano-dot formed in ZrON charge trapping layers by As + implantation to improve the device performance of MONOS CTF device. The TaN-[SiO 2-LaAlO 3]-[As +-implanted ZrON]-[LaAlO 3-SiO 2]-Si device shows a 6 nm ENT, a large initial memory window of 9.8 V, a 10-year extrapolated retention window of 3.6 V at 85°C, and an endurance window of 5.1 V after 10 5 cycles under fast 100 μs and low ±16 V program/erase. The performance of As +-implanted ZrON is significantly better than that of stacked Si 3N 4/Ir-dot/HfON device with poor thickness scaling due to excess Ir metal dot.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 9
Pages121-132
Number of pages12
Edition3
DOIs
StatePublished - 1 Dec 2011
Event9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
Duration: 10 Oct 201112 Oct 2011

Publication series

NameECS Transactions
Number3
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/10/1112/10/11

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  • Cite this

    Tsai, C-Y., Cheng, C. H., Chang, T. Y., Chou, K. Y., Chin, A., & Yeh, F. S. (2011). Size-dependent trapping effect in nano-dot non-volatile memory. In Physics and Technology of High-k Materials 9 (3 ed., pp. 121-132). (ECS Transactions; Vol. 41, No. 3). https://doi.org/10.1149/1.3633028