Size-Dependent Switching Properties of Spin-Orbit Torque MRAM with Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

Sk Ziaur Rahaman*, Yi Hui Su, Guan Long Chen, Fang Ming Chen, Jeng Hua Wei, Tuo Hung Hou, Shyh Shyuan Sheu, Chih I. Wu, Duan Lee Deng, I. Jung Wang, Ding Yeong Wang, Chi Feng Pai, Yu Chen Hsin, Shan Yi Yang, Hsin Han Lee, Yao Jen Chang, Yi Ching Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor ( ${\Delta }$ ) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology.

Original languageEnglish
Article number8984374
Pages (from-to)163-169
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume8
DOIs
StatePublished - 1 Jan 2020

Keywords

  • magnetic tunnel junction
  • spin-hall effect
  • spin-orbit torque
  • spin-transfer torque
  • Spintronics

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