Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition

Wen Che Tsai, Feng Yi Lin, Wen Cheng Ke, Shu Kai Lu, Shun-Jen Cheng, Wu-Ching Chou, Wei-Kuo Chen, Ming Chih Lee, Wen-Hao Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E2 mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5× 10-3 is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.

Original languageEnglish
Article number063102
JournalApplied Physics Letters
Volume94
Issue number6
DOIs
StatePublished - 23 Feb 2009

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