Site-controlled crystalline InN growth from the V-pits of a GaN substrate

Chien Ting Kuo, Lung Hsing Hsu, Yung Yu Lai, Shan Yun Cheng, Hao-Chung Kuo, Chien-Chung Lin, Yuh Jen Cheng*

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A site-controlled crystalline InN growth from the V-pits of a GaN substrate was investigated. The V- pits were fabricated by epitaxial lateral growth of GaN over SiO 2 disks patterned on a sapphire substrate. InN crystals were found to preferably grow on the inclined {10–11} crystal planes of the V-pits. A V-pit size of 1 μm or less can provide precise site-controlled InN nucleation at the V-pit bottom, while no InN was grown on the rest of the exposed GaN surfaces. The site-controlled nucleation is attributed to the low surface energy point created by the converging six {10–11} crystal facets at the V-pit bottom. When In source supply is below a certain value, this V-pit bottom is the only location able to aggregate enough active sources to start nucleation, thereby providing site-controlled crystal growth.

Original languageEnglish
Pages (from-to)449-454
Number of pages6
JournalApplied Surface Science
Volume405
DOIs
StatePublished - 31 May 2017

Keywords

  • InN
  • Nucleation
  • Selective area growth
  • Site-controlled nucleation

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