SiON/Ta2O5/TiN gate-stack transistor with 1.8 nm equivalent SiO2 thickness

Donggun Park*, Qiang Lu, Tsu Jae King, Chen-Ming Hu, Alexander Kalnitsky, Sing Pin Tay, Chia Cheng Cheng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

35 Scopus citations

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