SiON/Ta2O5/TiN gate-stack transistor with 1.8 nm equivalent SiO2 thickness

Donggun Park*, Qiang Lu, Tsu Jae King, Chen-Ming Hu, Alexander Kalnitsky, Sing Pin Tay, Chia Cheng Cheng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

35 Scopus citations


SiON/Ta2O5 stacked gate dielectric exhibits 3-5 orders smaller leakage current than SiO2 at 1.8 nm, while the transistor characteristics such as mobility, Id-Vg, and Id-Vd, are similar to those of SiO2 transistor. N-channel MOSFET with equivalent SiO2 thickness down to 1.8 nm (1.4 nm equivalent due to elimination of poly-Si depletion) is demonstrated. Process effects are also studied for optimum process condition.

Original languageEnglish
Pages (from-to)381-384
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 6 Dec 19989 Dec 1998

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