Si/Ni-silicide Schottky junctions with atomically flat interfaces using NiSi2 source

M. Koyama*, N. Shigemori, K. Ozawa, K. Tachi, K. Kakushima, O. Nakatsuka, K. Ohmori, K. Tsutsui, A. Nishiyama, N. Sugii, K. Yamada, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Si/Ni-silicide Schottky junctions with atomically flat and thermodynamically stable interfaces have been achieved by using NiSi2 source. The flat interfaces have been obtained from forming thin epitaxial NiSi2 layer without Si substrate consumption on the interfaces. A robust φBn of ∼0.66 eV and ideally stable n-factor of ∼1.00 were achieved from the Schottky barrier diode formed in the straightforward fabrication process. The facts are very beneficial for designing future nano-scale FETs.

Original languageEnglish
Title of host publicationESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference
Pages231-234
Number of pages4
DOIs
StatePublished - 2011
Event41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland
Duration: 12 Sep 201116 Sep 2011

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference41st European Solid-State Device Research Conference, ESSDERC 2011
CountryFinland
CityHelsinki
Period12/09/1116/09/11

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    Koyama, M., Shigemori, N., Ozawa, K., Tachi, K., Kakushima, K., Nakatsuka, O., Ohmori, K., Tsutsui, K., Nishiyama, A., Sugii, N., Yamada, K., & Iwai, H. (2011). Si/Ni-silicide Schottky junctions with atomically flat interfaces using NiSi2 source. In ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference (pp. 231-234). [6044192] (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2011.6044192