Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 μm with side-mode suppression ratio > 30dB

Y. H. Chang*, Kuo-Jui Lin, Hao-Chung Kuo, Jim Y. Chi, S. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We present monolithically quantum-dot vertical-cavity surface-emitting laser (QD VCSELs) operating in the 1.3 μm optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is ∼ 330 μW with slope efficiency of 0.18 W/A at room temperature. Single mode operation was obtained with side-mode suppression ratio of > 30 dB.

Original languageEnglish
Title of host publication18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Pages400-401
Number of pages2
DOIs
StatePublished - 1 Dec 2005
Event18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia
Duration: 22 Oct 200528 Oct 2005

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2005
ISSN (Print)1092-8081

Conference

Conference18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
CountryAustralia
CitySydney
Period22/10/0528/10/05

Keywords

  • Bandwidth
  • Quantum dots
  • Single mode
  • Surface emitting laser

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