Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 μm with side-mode suppression ratio > 30dB

Hao-Chung Kuo*, Kuo-Jui Lin, W. K. Tsai, Y. H. Chang, P. C. Peng, Fang I. Lai, Hsin-Chieh Yu, H. P. Yang, K. F. Lin, Jim Y. Chi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present monolithically quantum-dot vertical-cavity surface-emitting laser (QD VCSELs) operating in the 1.3 μm optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is ∼ 330 μW with slope efficiency of 0.18 W/A at room temperature. Single mode operation was obtained with side-mode suppression ratio of > 30 dB. Modulation bandwidth was also presented for the first time.

Original languageEnglish
Title of host publicationInternational Topical Meeting on Microwave Photonics, MWP 2005
Pages157-160
Number of pages4
DOIs
StatePublished - 1 Dec 2005
EventInternational Topical Meeting on Microwave Photonics, MWP 2005 - Seoul, Korea, Republic of
Duration: 12 Oct 200514 Oct 2005

Publication series

NameInternational Topical Meeting on Microwave Photonics, MWP 2005
Volume2005

Conference

ConferenceInternational Topical Meeting on Microwave Photonics, MWP 2005
CountryKorea, Republic of
CitySeoul
Period12/10/0514/10/05

Keywords

  • Bandwidth
  • Quantum dots
  • Single mode
  • Surface emitting laser

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    Kuo, H-C., Lin, K-J., Tsai, W. K., Chang, Y. H., Peng, P. C., Lai, F. I., Yu, H-C., Yang, H. P., Lin, K. F., & Chi, J. Y. (2005). Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 μm with side-mode suppression ratio > 30dB. In International Topical Meeting on Microwave Photonics, MWP 2005 (pp. 157-160). [1590291] (International Topical Meeting on Microwave Photonics, MWP 2005; Vol. 2005). https://doi.org/10.1109/MWP.2005.203563