Single sided heating method for chip-to-wafer bonding with submicron Cu/In interconnects

Ching Yun Chang, Shih Wei Lee, Geng Ming Chang, Kuan-Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this research, a single sided heating method is developed to solve the issue of metal oxidation at bottom substrate without antioxidant metal coating in chip-to-wafer bonding. By using optimized bonding parameter, the bonding quality and electrical performance is better than double sided heating in chip-to-wafer bonding. With the help of Cu/In low temperature bonding and single sided heating approach, chip-to-wafer bonding is successfully developed. With the additional annealing process, the bonding duration of single sided heating bonding can be reduced to keep the cost down. Interconnects also maintain good electrical properties after reliability test such as TCT and unbiased HAST. These results prove that the single sided heating method is able to provide good bonding quality and reliability for chip-to-wafer bonding process.

Original languageEnglish
Title of host publication11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016 - Proceedings
PublisherIEEE Computer Society
Pages38-41
Number of pages4
ISBN (Electronic)9781509047697
DOIs
StatePublished - 27 Dec 2016
Event11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016 - Taipei, Taiwan
Duration: 26 Oct 201628 Oct 2016

Publication series

NameProceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
ISSN (Print)2150-5934
ISSN (Electronic)2150-5942

Conference

Conference11th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2016
CountryTaiwan
CityTaipei
Period26/10/1628/10/16

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