Single pulse output of partially depleted SOI FETs

K. A. Jenkins*, Y. Taur, J. Y.C. Sun

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

Floating body effects in partially-depleted silicon-on-insulator (SOI) field effect transistors leads to variation in the threshold voltage. This, in turn, gives rise to variations in drain current depending on bias conditions and device history. A method was developed to measure drain currents and full I-V curves for single pulses. This technique allows the device characteristics of any one of a series of pulses to be obtained, thus, accounting for the effect of the prior activity of a device on its output.

Original languageEnglish
Pages72-73
Number of pages2
StatePublished - 1996
EventProceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA
Duration: 30 Sep 19963 Oct 1996

Conference

ConferenceProceedings of the 1996 IEEE International SOI Conference
CitySanibel Island, FL, USA
Period30/09/963/10/96

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