Floating body effects in partially-depleted silicon-on-insulator (SOI) field effect transistors leads to variation in the threshold voltage. This, in turn, gives rise to variations in drain current depending on bias conditions and device history. A method was developed to measure drain currents and full I-V curves for single pulses. This technique allows the device characteristics of any one of a series of pulses to be obtained, thus, accounting for the effect of the prior activity of a device on its output.
|Number of pages||2|
|State||Published - 1996|
|Event||Proceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA|
Duration: 30 Sep 1996 → 3 Oct 1996
|Conference||Proceedings of the 1996 IEEE International SOI Conference|
|City||Sanibel Island, FL, USA|
|Period||30/09/96 → 3/10/96|