Single-pole double-throw switch using stacked-FET configuration at millimeter wave frequencies

Peng I. Mei, Guan Wei Wu, Heng Shou Hsu, Ting Jui Huang, Yi Fan Tsao, Che Yang Chiang, Heng-Tung Hsu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we present single-pole double-throw (SPDT) switch at Ka-band for phased array front-end applications. The proposed switch composed of three shunt arms and a quarter-wave length impedance transformer in series on each branch. The stacked-FET configuration was adopted to enhance the power handling capability. Implemented with 0.15um GaAs pHEMT technology by WIN Semiconductor, the overall chip size was 2 mm by 1 mm. The measured insertion loss was less than 3 dB with better than 25 dB isolation from 15 GHz to 35 GHz. The proposed configuration also featured an input 1-dB compression point of 26 dBm.

Original languageEnglish
Title of host publication2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages791-793
Number of pages3
ISBN (Electronic)9784902339451
DOIs
StatePublished - 16 Jan 2019
Event30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duration: 6 Nov 20189 Nov 2018

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2018-November

Conference

Conference30th Asia-Pacific Microwave Conference, APMC 2018
CountryJapan
CityKyoto
Period6/11/189/11/18

Keywords

  • PHEMT
  • Power handling
  • SPDT switch
  • Stacked-FET

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