Single-mode monolithic quantum-dot VCSEL in 1.3 μmwith sidemode suppression ratio over 30 dB

Y. H. Chang, P. C. Peng, W. K. Tsai, Kuo-Jui Lin, Fang Lai, R. S. Hsiao, H. P. Yang, Hsin-Chieh Yu, K. F. Lin, J. Y. Chi, S. C. Wang, Hao-Chung Kuo

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37 Scopus citations

Abstract

We present monolithic quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs) operating in the 1.3-μm optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is ∼330 μW with slope efficiency of 0.18 W/A at room temperature. Single-mode operation was obtained with a sidemode suppression ratio of >30 dB. The modulation bandwidth and eye diagram in 2.5 Gb/s was also presented.

Original languageEnglish
Pages (from-to)847-849
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number7
DOIs
StatePublished - 1 Apr 2006

Keywords

  • Bandwidth
  • Quantum dots (QDs)
  • Single mode
  • Surface-emitting laser

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    Chang, Y. H., Peng, P. C., Tsai, W. K., Lin, K-J., Lai, F., Hsiao, R. S., Yang, H. P., Yu, H-C., Lin, K. F., Chi, J. Y., Wang, S. C., & Kuo, H-C. (2006). Single-mode monolithic quantum-dot VCSEL in 1.3 μmwith sidemode suppression ratio over 30 dB. IEEE Photonics Technology Letters, 18(7), 847-849. https://doi.org/10.1109/LPT.2006.871831