Single-mode, high-speed, and high-power vertical-cavity surface-emitting lasers at 850 nm for short to medium reach (2 km) optical interconnects

Jin Wei Shi, Zhi Rui Wei, Kai Lun Chi, Jia Wei Jiang, Jhih Min Wun, I. Cheng Lu, Jyehong Chen, Ying Jay Yang

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

The vertical-cavity surface-emitting lasers (VCSELs) with high single-mode (narrow linewidth) output power are essential to minimize chromatic dispersion and to further improve the bit-rate distance product in a multimode fiber, which has a significant propagation loss (∼3.5 dB/km) at 850 nm wavelength. Here, we demonstrate the detailed design considerations and fabrication of a single-mode, high-power, and high-speed VCSELs at the 850 nm wavelength with oxide-relief and Zn-diffusion apertures for the application of short (0.3 km) to medium reach (2 km) optical interconnects. By optimizing the relative geometric sizes between two such apertures in our demonstrated 850-nm VCSELs, we can not only attain high single-mode output power (∼6.5 mW), but also with a reasonable threshold current (< 2.0 mA). Furthermore, the spatial hole burning effect induced low-frequency roll off can also be minimized in our optimized structure to obtain a maximum data rate up to 26 Gbit/s. The record-high bit rate-distance products for OM4 MMF transmission under ON-OFF keying (14 Gbit/s \times 2.0 km) modulation formats have been successfully demonstrated by the use of our VCSEL.

Original languageEnglish
Article number6595017
Pages (from-to)4037-4044
Number of pages8
JournalJournal of Lightwave Technology
Volume31
Issue number24
DOIs
StatePublished - 15 Dec 2013

Keywords

  • Semiconductor lasers
  • vertical-cavity surface-emitting lasers (VCSELs)

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