Single germanium quantum-dot placement along with self-aligned electrodes for effective management of single charge tunneling

Inn Hao Chen*, Kuan Hung Chen, Wei Ting Lai, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We demonstrated the controlled placement of a Ge quantum dot (QD) along with tunnel-junction engineering in a self-organized approach for the effective management of single charge tunneling. In this approach, a single-Ge-QD ( ∼11 nm) self-aligning with nickel-polycide electrodes is realized by thermally oxidizing a SiGe nanorod that bridges a 15-nm-wide nanotrench in close proximity to electrodes via a spacer bilayer of Si3N 4/SiO2. The fabricated Ge-QD single-hole transistor exhibits clear Coulomb oscillation and Coulomb diamond behaviors at T = 77 K?150 K, providing a way to analyze the electronic structure of the Ge QD.

Original languageEnglish
Article number6352881
Pages (from-to)3224-3230
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume59
Issue number12
DOIs
StatePublished - 4 Dec 2012

Keywords

  • Ge
  • quantum dot (QD) placementself-aligned electrode
  • single electron

Fingerprint Dive into the research topics of 'Single germanium quantum-dot placement along with self-aligned electrodes for effective management of single charge tunneling'. Together they form a unique fingerprint.

  • Cite this