Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling

I. H. Chen*, K. H. Chen, Pei-Wen Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate controlled number and placement of the Ge quantum dot (QD) along with tunnel junction engineering through a self-organized approach for effective management of single electron tunneling. In this approach, a single Ge QD (∼11 nm) self-aligning with nickel-silicide electrodes is realized by thermally oxidizing a SiGe nanorod bridging a 15-nm-wide nanotrench in close proximity to electrodes via a spacer bi-layer of Si 3N 4/SiO 2. The fabricated Ge QD single electron transistor exhibits clear Coulomb staircase and Coulomb diamond behaviors at T = 120-300 K.

Original languageEnglish
Title of host publication2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs
StatePublished - 12 Oct 2012
Event2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States
Duration: 10 Jun 201211 Jun 2012

Publication series

Name2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Conference

Conference2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
CountryUnited States
CityHonolulu, HI
Period10/06/1211/06/12

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