Single-fabrication-step Ge Nanosphere/SiO2/SiGe heterostructures: A key enabler for realizing Ge MOS devices

Po Hsiang Liao, Kang Ping Peng, Chia Tsong Chen, Horng-Chih Lin, Tom George, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was exploited to simultaneously create these heterostructures in a single oxidation step. Single-crystalline (100)/(110) Si1-xGex shells with Ge content as high as x= 0.85/0.35 and with a compressive strain of 3%/1.5% were achieved. Our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity, providing a 'building block' for the fabrication of Ge-based MOS devices.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages254-256
Number of pages3
ISBN (Print)9781538637111
DOIs
StatePublished - 26 Jul 2018
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 13 Mar 201816 Mar 2018

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period13/03/1816/03/18

Keywords

  • Ge
  • channel engineering and strain engineering

Fingerprint Dive into the research topics of 'Single-fabrication-step Ge Nanosphere/SiO<sub>2</sub>/SiGe heterostructures: A key enabler for realizing Ge MOS devices'. Together they form a unique fingerprint.

Cite this