Single-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching

Jeng-Tzong Sheu*, K. S. You, C. H. Wu, Kow-Ming Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

A single-crystal silicon nanowire was fabricated using scanning probe lithography and KOH wet etching techniques. Single-electron transistors were produced with a mix and match of optical lithography and scanning probe lithography. It was demonstrated that SPL and KOH wet etching systems can accurately generate oxide patterns and can subsequently fabricate single-electron transistors.

Original languageEnglish
Pages (from-to)2824-2828
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number6
DOIs
StatePublished - 1 Nov 2002

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