An unconventional nonpolar plane (134̄0) ZnO epitaxial film was grown on a 2-inch (114) LaAlO 3 (LAO) substrate by pulsed laser deposition. Reflection high energy electron diffraction (RHEED) patterns of the grown ZnO surface demonstrate single crystalline characteristics with the orientation inclined with the a-axis. Atomic force microscopy (AFM) shows that the grown ZnO film exhibits a stripe-like surface morphology with the longitudinal direction parallel to the c-axis. Cross-sectional transmission electron microscopy (TEM) with selected area electron diffraction (SAED) was used to characterize the microstructure and to determine the growth plane of ZnO grown film as (134̄0). In addition, XRD pole-figure measurements confirm the single domain growth of (134̄0) ZnO on (114) LAO. Room temperature photoluminescence spectra of the ZnO film measured across the substrate show the same near band edge emission peak at 3.29 eV, indicating that the nonpolar (134̄0) ZnO film has excellent uniform optical properties.
- Non-polar ZnO
- Pulsed laser deposition