Simultaneously enhancing internal and extraction efficiencies of GaN-based light emitting diodes via chemical-wet-etching patterned-sapphire-substrate (CWE-PSS)

Ya Ju Lee*, C. H. Chiu, Hao-Chung Kuo, Tien-Chang Lu, S. C. Wang, Kar Wai Ng, Kei May Lau, Zu-Po Yang, Allan S.P. Chang, Shawn Yu Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report a chemical-wet-etching patterned-sapphire-substrate (CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency of gallium nitride based light-emitting-diode (LED). According to transmission electron microscopy (TEM) images, the threading dislocations penetrating into active region was dramatically reduced in the CWE-PSS structure compared to the planar sapphire substrate, i.e. enhancement of internal quantum efficiency. And according to the measurement of angular dependent diffraction power, CWE-PSS also serves as a diffraction grating which diffracts guided light into escaping cones, further improving ligh: extraction efficiency of LED device.

Original languageEnglish
Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
Pages225-230
Number of pages6
Edition5
DOIs
StatePublished - 1 Dec 2007
Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: 7 Oct 200712 Oct 2007

Publication series

NameECS Transactions
Number5
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period7/10/0712/10/07

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