Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation

Tien-Sheng Chao, Tsung Hsien Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we found the nitridation on the interpoly-oxide with NH3 and N2O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown fded, charge to breakdown (QED) and trapping rate The QBD of interpoly-oxide can be reached as high as 35 C/cm2. This scheme is very promising for nonvolatile memory devices.

Original languageEnglish
Title of host publicationVLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages255-258
Number of pages4
ISBN (Electronic)0780377656
DOIs
StatePublished - 1 Jan 2003
Event20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003 - Hsinchu, Taiwan
Duration: 6 Oct 20038 Oct 2003

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume2003-January
ISSN (Print)1930-8868

Conference

Conference20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003
CountryTaiwan
CityHsinchu
Period6/10/038/10/03

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