Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber

Fu Kuo Hsueh, Chih Chen Chang, Kun Ping Huang, Yao Jen Lee, Wen Fa Wu, Tien-Sheng Chao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Microwave annealing were able for the applications of dopant activation[1,2] and silicidation[3] of the nano-scaled transistors, However, during conventional fixed-frequency microwave heating, standing wave patterns are formed in the microwave processing chamber resulting in nodes and antinodes over the processing area. This non-uniform energy distribution in turn results in non-uniform heating, commonly observed in the kitchen microwave oven. Coupling effects to improve the uniformity and dopant activation efficiency by fixed-frequency microwave annealing process was investigated[4]. Through the aid of susceptors, the uniformity of Rs and dopant activation efficiency could be improved.

Original languageEnglish
Title of host publicationProceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages385-388
Number of pages4
ISBN (Electronic)9781479999286, 9781479999286
DOIs
StatePublished - 25 Aug 2015
Event22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
Duration: 29 Jun 20152 Jul 2015

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2015-August

Conference

Conference22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
CountryTaiwan
CityHsinchu
Period29/06/152/07/15

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  • Cite this

    Hsueh, F. K., Chang, C. C., Huang, K. P., Lee, Y. J., Wu, W. F., & Chao, T-S. (2015). Simulations of electric field distributions by the susceptor-coupling effects for 2.45GHz microwave inside microwave chamber. In Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 (pp. 385-388). [7224422] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2015.7224422