Simulation study of type-II Ge/Si quantum dot for solar cell applications

Weiguo Hu, Mohammad Maksudur Rahman, Ming Yi Lee, Yiming Li, Seiji Samukawa

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The electronic structure, miniband formation conditions, and required process parameters of type-II Ge/Si quantum dots are calculated using a 3D finite element method. We further estimate the device conversion efficiency and optimize the appropriate operation conditions. By using the crystalline silicon as the matrix, the explored intermediate band solar cell (IBSC) may not be suitable for 1 sun application, but it is a great value under concentration application. By considering an appropriate H-passivation treatment on amorphous silicon, the type II Ge/Si IBSC can achieve 44.0% conversion efficiency under 1 sun application.

Original languageEnglish
Article number124509
JournalJournal of Applied Physics
Issue number12
StatePublished - 17 Oct 2013

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