Simulation of the nanoscale interconnects within a spin-resolved electron transport model

A. Useinov*, H. H. Lin, N. Useinov, L. Tagirov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The work represents the theoretical modeling of the electrical conductance in the nanoscale interconnects within approach of the extended point-like contact (PC) model. The approach describes a diffusive, quasi-ballistic, ballistic and quantum regimes of the spinresolved conductance, that is important for the development of the heterojunction models, including 2D -3D interconnects. As a benefit, the model provides a unified description of the contact resistance from Maxwell diffusive through the ballistic to a purely quantum transport regimes without residual terms. The model of the PC assumes that the contact area can be replaced by a complex quantum device, e.g. single tunnel junction, narrow magnetic domain wall (DW), vacuum gap between tip and surface, source to drain transistor's channel, etc. The potential energy landscape of the device determines its electrical properties.

Original languageEnglish
Title of host publication2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages72-73
Number of pages2
ISBN (Electronic)9781728142326
DOIs
StatePublished - Aug 2020
Event2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan
Duration: 10 Aug 202013 Aug 2020

Publication series

Name2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Conference

Conference2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
CountryTaiwan
CityHsinchu
Period10/08/2013/08/20

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