Simulation of the electrical characteristics of field emission triodes with various gate structures

Tzu Kun Ku, Ming Shang Chen, Chih Chong Wang, Ming Shiann Feng, Ling Jar Hsieh, Jammy C.M. Huang, Huang-Chung Cheng

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

A new two-dimensional numerical simulation which can accurately reproduce the empirical electrical characteristics of vertical field-emission triodes (FET’s) with various gate geometries has been developed. The electrical characteristics of volcano-shaped-gate FET’s were simulated for the first time and compared with those of planar- gate ones. Volcano-shaped-gate FET’s exhibit significant advantages over planar-gate ones due to their superior current-voltage (I-V) properties and larger tolerance of fabrication error. A reasonable definition of emission area was obtained by applying the non-uniform current density model. For sub-micron gate aperture, the gate current is obvious only if the device structure is deeply tip-recessed. On the basis of the evaluation of the device structures including the tip cone angle, the related tip-to-gate height, the emitter shape, and the shrinkage of gate aperture, a high-aspect-ratio conical emitter with a small tip radius will be the optimum structure of FET’s for low-voltage operation.

Original languageEnglish
Pages (from-to)5789-5796
Number of pages8
JournalJapanese Journal of Applied Physics
Volume34
Issue number10
DOIs
StatePublished - 1 Jan 1995

Keywords

  • Emitter shape
  • Field-emission triodes (FETs)
  • Gate aperture
  • Tip-to-gate height
  • Volcano-shaped gate

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