Simulation of SOI devices and circuits using BSIM3SOI

Dennis Sinitsky; Stephen Tang; Arun Jangity; Fariborz Assaderaghi; Ghavam Shahidi; Chen-Ming Hu

doi:10.1109/55.709628

Simulation of SOI devices and circuits using BSIM3SOI

Dennis Sinitsky^*, Stephen Tang, Arun Jangity, Fariborz Assaderaghi, Ghavam Shahidi, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A versatile SOI model derived from the BSIM3v3 bulk MOSFET model is capable of simulating partially and fully depleted devices with options for self-heating and floating body effects. The model can automatically switch between fully and partially depleted regimes. After refining body current models we for the first time present successful dc and transient device and circuit simulation of an SOI MOSFET technology with L _eff below 0.2 μm.

Original language	English
Pages (from-to)	323-325
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	9
DOIs	https://doi.org/10.1109/55.709628
State	Published - 1 Sep 1998

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abstract = " A versatile SOI model derived from the BSIM3v3 bulk MOSFET model is capable of simulating partially and fully depleted devices with options for self-heating and floating body effects. The model can automatically switch between fully and partially depleted regimes. After refining body current models we for the first time present successful dc and transient device and circuit simulation of an SOI MOSFET technology with L eff below 0.2 μm. ",

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