Abstract
A versatile SOI model derived from the BSIM3v3 bulk MOSFET model is capable of simulating partially and fully depleted devices with options for self-heating and floating body effects. The model can automatically switch between fully and partially depleted regimes. After refining body current models we for the first time present successful dc and transient device and circuit simulation of an SOI MOSFET technology with L eff below 0.2 μm.
Original language | English |
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Pages (from-to) | 323-325 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 19 |
Issue number | 9 |
DOIs | |
State | Published - 1 Sep 1998 |