Simulation of SOI devices and circuits using BSIM3SOI

Dennis Sinitsky*, Stephen Tang, Arun Jangity, Fariborz Assaderaghi, Ghavam Shahidi, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

A versatile SOI model derived from the BSIM3v3 bulk MOSFET model is capable of simulating partially and fully depleted devices with options for self-heating and floating body effects. The model can automatically switch between fully and partially depleted regimes. After refining body current models we for the first time present successful dc and transient device and circuit simulation of an SOI MOSFET technology with L eff below 0.2 μm.

Original languageEnglish
Pages (from-to)323-325
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number9
DOIs
StatePublished - 1 Sep 1998

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    Sinitsky, D., Tang, S., Jangity, A., Assaderaghi, F., Shahidi, G., & Hu, C-M. (1998). Simulation of SOI devices and circuits using BSIM3SOI. IEEE Electron Device Letters, 19(9), 323-325. https://doi.org/10.1109/55.709628