Simulation of interface state generation effects in LDD MOSFET's

Ta-Hui Wang, Chimoon Huang, Peng Cheng Chou, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of an LDD MOSFET after hot carrier stress. The spatial distribution of interface states is calculated with a combined Monte Carlo and breaking silicon-hydrogen bond model. A 0.6 μm LDD MOSFET was characterized to compare the simulation. A reduction of the substrate current at V/sub gspl cong/0.5 Vd in a stressed device was observed from both measurement and simulation. Our study reveals that the reduction is attributed to a distance between the maximum channel electric field and the generated interface states.

Original languageEnglish
Title of host publication1994 International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD 1994
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages23-26
Number of pages4
ISBN (Electronic)0780318676, 9780780318670
DOIs
StatePublished - 1 Jan 1994
Event5th International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD 1994 - Honolulu, United States
Duration: 5 Jun 19946 Jun 1994

Publication series

Name1994 International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD 1994

Conference

Conference5th International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD 1994
CountryUnited States
CityHonolulu
Period5/06/946/06/94

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