@inproceedings{424047f1401346718f2fdda1ca053378,
title = "Simulation of interface state generation effects in LDD MOSFET's",
abstract = "A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of an LDD MOSFET after hot carrier stress. The spatial distribution of interface states is calculated with a combined Monte Carlo and breaking silicon-hydrogen bond model. A 0.6 μm LDD MOSFET was characterized to compare the simulation. A reduction of the substrate current at V/sub gspl cong/0.5 Vd in a stressed device was observed from both measurement and simulation. Our study reveals that the reduction is attributed to a distance between the maximum channel electric field and the generated interface states.",
author = "Ta-Hui Wang and Chimoon Huang and Chou, {Peng Cheng} and Chung, {Steve S.}",
year = "1994",
month = jan,
day = "1",
doi = "10.1109/NUPAD.1994.343499",
language = "English",
series = "1994 International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD 1994",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "23--26",
booktitle = "1994 International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD 1994",
address = "United States",
note = "null ; Conference date: 05-06-1994 Through 06-06-1994",
}