Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer

Yi An Chang*, Chuan Yu Luo, Hao-Chung Kuo, Yen Kuang Kuo, Chia Feng Lin, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.

Original languageEnglish
Pages (from-to)7916-7918
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number11
DOIs
StatePublished - 9 Nov 2005

Keywords

  • Electronic blocking layer
  • Leakage current
  • Numerical simulation
  • Quaternary InAlGaN alloys
  • Semiconductor lasers

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