Simulation of grain-boundary traps effect for 3D vertical gate NAND flash memory cell: from structure geometry to trap description

Pei Yu Wang, Bing-Yue Tsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

3D NAND Flash is the most promising memory architecture which can increase capacity continuously without aggressive scaling-down. The performance variability of the memory cell induced by the grain boundaries (GBs) of the poly-Si channel is a major concern. In this work, a full 3D simulation is performed to study the threshold voltage variability. The impact of the 3D structure geometry on the variation induced by the GB traps is discussed. In addition, a discrete-trap approach is also proposed to reflect the true behavior of the GB traps. A smaller variation in the discrete-trap approach is observed due to the local trap effect.

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479956777
DOIs
StatePublished - 4 Dec 2015
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: 8 Jun 20149 Jun 2014

Publication series

Name2014 Silicon Nanoelectronics Workshop, SNW 2014

Conference

ConferenceSilicon Nanoelectronics Workshop, SNW 2014
CountryUnited States
CityHonolulu
Period8/06/149/06/14

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    Wang, P. Y., & Tsui, B-Y. (2015). Simulation of grain-boundary traps effect for 3D vertical gate NAND flash memory cell: from structure geometry to trap description. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348607] (2014 Silicon Nanoelectronics Workshop, SNW 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348607