Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell

Hsun Wen Wang*, Peichen Yu, Hau Vei Han, Chien-Chung Lin, Hao-Chung Kuo, Shiuan-Huei Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The characteristics of non-polar double heterojunction GaN/InxGa1-xN solar cells with various indium contents are numerically investigated. By smoothing the interface band edge offset with graded junction, the maximum efficiency reached 24.32 % as In0.6Ga0.4N.

Original languageEnglish
Title of host publication2012 Conference on Lasers and Electro-Optics (CLEO)
StatePublished - 6 May 2012
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: 6 May 201211 May 2012

Publication series

NameConference on Lasers and Electro-Optics
ISSN (Print)2160-9020

Conference

Conference2012 Conference on Lasers and Electro-Optics, CLEO 2012
CountryUnited States
CitySan Jose, CA
Period6/05/1211/05/12

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