Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell

Hsun Wen Wang, Peichen Yu, Hau Vei Han, Chien-Chung Lin, Hao-Chung Kuo*, Shiuan-Huei Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, the characteristics of non-polar double heterojunction GaN/ InxGa1-xN solar cells with various indium contents are numerically investigated under AM 1.5 global spectrum using finite element analysis. By smoothing the interface band edge offset with graded junction, we see the enhancement on short circuit current and power conversion efficiency. The maximum efficiency of the simulation results reached 24,32 % when the major absorption region contains 65% of indium composition.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC)
Pages143-145
Number of pages3
DOIs
StatePublished - 2 Jan 2013
Event2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
Duration: 2 Jan 20134 Jan 2013

Publication series

NameInternational Nanoelectronics Conference
ISSN (Print)2159-3523

Conference

Conference2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
CountrySingapore
CitySingapore
Period2/01/134/01/13

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