Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs

Chien Shao Tang, Shao Ming Yu, Hong Mu Chou, Jam Wem Lee, Yi-Ming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

In this paper, electrical characteristics of sub-10 nm nanowirc FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than that latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs. Nanodevice, semiconductor devices, nanowire, FinFET, omega-shaped-gate, surrounding-gate, quantum correction model, density-gradient, coverage ration, 3D simulation, turn-on and turn-off characteristics, gate capacitance, turn-on resistance, modeling and simulation.

Original languageEnglish
Title of host publication2004 4th IEEE Conference on Nanotechnology
Pages281-283
Number of pages3
DOIs
StatePublished - 16 Aug 2004
Event2004 4th IEEE Conference on Nanotechnology - Munich, Germany
Duration: 16 Aug 200419 Aug 2004

Publication series

Name2004 4th IEEE Conference on Nanotechnology

Conference

Conference2004 4th IEEE Conference on Nanotechnology
CountryGermany
CityMunich
Period16/08/0419/08/04

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    Tang, C. S., Yu, S. M., Chou, H. M., Lee, J. W., & Li, Y-M. (2004). Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs. In 2004 4th IEEE Conference on Nanotechnology (pp. 281-283). (2004 4th IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2004.1392325