In this paper, electrical characteristics of sub-10 nm nanowirc FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than that latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs. Nanodevice, semiconductor devices, nanowire, FinFET, omega-shaped-gate, surrounding-gate, quantum correction model, density-gradient, coverage ration, 3D simulation, turn-on and turn-off characteristics, gate capacitance, turn-on resistance, modeling and simulation.