Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs

Chien Shao Tang; Shao Ming Yu; Hong Mu Chou; Jam Wem Lee; Yi-Ming Li

doi:10.1109/NANO.2004.1392325

Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs

Chien Shao Tang, Shao Ming Yu, Hong Mu Chou, Jam Wem Lee, Yi-Ming Li^*

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

In this paper, electrical characteristics of sub-10 nm nanowirc FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than that latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs. Nanodevice, semiconductor devices, nanowire, FinFET, omega-shaped-gate, surrounding-gate, quantum correction model, density-gradient, coverage ration, 3D simulation, turn-on and turn-off characteristics, gate capacitance, turn-on resistance, modeling and simulation.

Original language	English
Title of host publication	2004 4th IEEE Conference on Nanotechnology
Pages	281-283
Number of pages	3
DOIs	https://doi.org/10.1109/NANO.2004.1392325
State	Published - 16 Aug 2004
Event	2004 4th IEEE Conference on Nanotechnology - Munich, Germany Duration: 16 Aug 2004 → 19 Aug 2004

Publication series

Name	2004 4th IEEE Conference on Nanotechnology

Conference

Conference	2004 4th IEEE Conference on Nanotechnology
Country	Germany
City	Munich
Period	16/08/04 → 19/08/04

Access to Document

10.1109/NANO.2004.1392325

Link to publication in Scopus

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Cite this

Tang, C. S., Yu, S. M., Chou, H. M., Lee, J. W., & Li, Y-M. (2004). Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs. In 2004 4th IEEE Conference on Nanotechnology (pp. 281-283). (2004 4th IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2004.1392325

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abstract = "In this paper, electrical characteristics of sub-10 nm nanowirc FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than that latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs. Nanodevice, semiconductor devices, nanowire, FinFET, omega-shaped-gate, surrounding-gate, quantum correction model, density-gradient, coverage ration, 3D simulation, turn-on and turn-off characteristics, gate capacitance, turn-on resistance, modeling and simulation.",

author = "Tang, {Chien Shao} and Yu, {Shao Ming} and Chou, {Hong Mu} and Lee, {Jam Wem} and Yi-Ming Li",

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AU - Tang, Chien Shao

AU - Yu, Shao Ming

AU - Chou, Hong Mu

AU - Lee, Jam Wem

AU - Li, Yi-Ming

PY - 2004/8/16

Y1 - 2004/8/16

N2 - In this paper, electrical characteristics of sub-10 nm nanowirc FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than that latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs. Nanodevice, semiconductor devices, nanowire, FinFET, omega-shaped-gate, surrounding-gate, quantum correction model, density-gradient, coverage ration, 3D simulation, turn-on and turn-off characteristics, gate capacitance, turn-on resistance, modeling and simulation.

AB - In this paper, electrical characteristics of sub-10 nm nanowirc FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than that latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs. Nanodevice, semiconductor devices, nanowire, FinFET, omega-shaped-gate, surrounding-gate, quantum correction model, density-gradient, coverage ration, 3D simulation, turn-on and turn-off characteristics, gate capacitance, turn-on resistance, modeling and simulation.

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