Simulation of electric field distribution in CMOS single photon avalanche diodes at breakdown voltage

Jau Yang Wu*, Sheng-Di Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We simulate the electric field distribution in single-photon avalanche diodes (SPADs) fabricated by CMOS 0.25-μm high-voltage technology to explain the observed non-uniform 2-D photo-count mapping. The cause of non-uniform electric field distribution at the breakdown voltage is discussed with the aid of simulation. A method for improving the electric field uniformity is also proposed accordingly.

Original languageEnglish
Title of host publication2014 International Conference on Optical MEMS and Nanophotonics, OMN 2014 - Proceedings
PublisherIEEE Computer Society
Pages187-188
Number of pages2
ISBN (Electronic)9780992841423
DOIs
StatePublished - 14 Oct 2014
Event2014 International Conference on Optical MEMS and Nanophotonics, OMN 2014 - Glasgow, United Kingdom
Duration: 17 Aug 201421 Aug 2014

Publication series

NameInternational Conference on Optical MEMS and Nanophotonics
ISSN (Print)2160-5033
ISSN (Electronic)2160-5041

Conference

Conference2014 International Conference on Optical MEMS and Nanophotonics, OMN 2014
CountryUnited Kingdom
CityGlasgow
Period17/08/1421/08/14

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