Simulation of Deep Submicron SOI N-MOSFET Considering the Velocity Overshoot Effect

Woo Sung Choi; Young June Park; Hong Shick Min; Fariborz Assaderaghi; Chen-Ming Hu; Robert W. Dutton

doi:10.1109/55.388725

Simulation of Deep Submicron SOI N-MOSFET Considering the Velocity Overshoot Effect

Woo Sung Choi, Young June Park, Hong Shick Min, Fariborz Assaderaghi, Chen-Ming Hu, Robert W. Dutton

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A set of numerical simulations were performed on 0.12 µm SOI MOSFET's with relatively uniform channel field and charge using the hydrodynamic model, the energy transport model, and the drift-diffusion model. The simulation results based on the advanced models (hydrodynamic and energy transport) show nearly identical results for the I–Vcharacteristics and they agreed quite well with the experimental results, while the results from drift-diffusion model do not. Also the simulation results show that both the hydrodynamic and energy transport models handle the effect of velocity overshoot on the I–V characteristic of the 0.12 µm device well.

Original language	English
Pages (from-to)	333-335
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	16
Issue number	7
DOIs	https://doi.org/10.1109/55.388725
State	Published - 1 Jan 1995

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title = "Simulation of Deep Submicron SOI N-MOSFET Considering the Velocity Overshoot Effect",

abstract = "A set of numerical simulations were performed on 0.12 µm SOI MOSFET's with relatively uniform channel field and charge using the hydrodynamic model, the energy transport model, and the drift-diffusion model. The simulation results based on the advanced models (hydrodynamic and energy transport) show nearly identical results for the I–Vcharacteristics and they agreed quite well with the experimental results, while the results from drift-diffusion model do not. Also the simulation results show that both the hydrodynamic and energy transport models handle the effect of velocity overshoot on the I–V characteristic of the 0.12 µm device well.",

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AU - Choi, Woo Sung

AU - Park, Young June

AU - Min, Hong Shick

AU - Assaderaghi, Fariborz

AU - Hu, Chen-Ming

AU - Dutton, Robert W.

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AB - A set of numerical simulations were performed on 0.12 µm SOI MOSFET's with relatively uniform channel field and charge using the hydrodynamic model, the energy transport model, and the drift-diffusion model. The simulation results based on the advanced models (hydrodynamic and energy transport) show nearly identical results for the I–Vcharacteristics and they agreed quite well with the experimental results, while the results from drift-diffusion model do not. Also the simulation results show that both the hydrodynamic and energy transport models handle the effect of velocity overshoot on the I–V characteristic of the 0.12 µm device well.

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