@inproceedings{6cd8c4c15722430bb246881c8e1b9863,
title = "Simulation of CMOS circuit degradation due to hot-carrier effects",
abstract = "By comparing long-term ring-oscillator hot-carrier degradation data and simulation results the authors show that a public-domain circuit simulator, BERT (Berkeley Reliability Tools), can predict CMOS digital circuit speed degradation from transistor DC stress data. Large initial PMOSFET drain current enhancement can result in initial frequency enhancement followed by an initial fast degradation due to the zero crossing effect. The relationship between circuit lifetime and transistor DC stress is examined.",
author = "Quader, {Khandker N.} and Ko, {Ping K.} and Chen-Ming Hu and Peng Fang and Yue, {John T.}",
year = "1992",
month = mar,
day = "1",
doi = "10.1109/RELPHY.1992.187616",
language = "English",
isbn = "078030473X",
series = "Annual Proceedings - Reliability Physics (Symposium)",
publisher = "Publ by IEEE",
pages = "16--23",
booktitle = "Annual Proceedings - Reliability Physics (Symposium)",
note = "null ; Conference date: 31-03-1992 Through 02-04-1992",
}