Simulation of charge collection probability in GaAs and Si solar cells from external quantum efficiency

Shih Li Lin, Hung Ruei Tseng, Shun Chieh Hsu, Yin Han Chen, Chien-Chung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The charge collection probability is one of the most important parameters of a solar cell. We derived two kinds of special functions to fit the external quantum efficiency and use then to reconstruct the charge collection probability. The simulation results of gallium arsenide and silicon solar cells are put into comparison.

Original languageEnglish
Title of host publication4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781479942084
DOIs
StatePublished - 23 Jun 2015
Event4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015 - Taipei, Taiwan
Duration: 4 May 20156 May 2015

Publication series

Name4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015

Conference

Conference4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015
CountryTaiwan
CityTaipei
Period4/05/156/05/15

Keywords

  • charge collection probability
  • Galluim Arsenide
  • MATLAB
  • photovoltaic cells
  • Silicon
  • simulation

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