Simulation of an Asymmetrical Nano Ring by Mapping of the Realistic Electronic Confinement Potential

L.M Thu, Oleksandr Voskoboynikov

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In this paper we propose a computational method which uses smooth three dimensional confinement potentials for description of the electronic properties of semiconductor nano objects. The potential is mapping the actual (known from experiment) geometrical, structural, and material composition of the objects. Using the mapping we are able to formulate an effective electronic Hamiltonian and in a very efficient manner obtain the energy states and wave functions of the electrons confined in the object. We demonstrate the approach efficiency considering influence of In distribution in an asymmetrical InAs/GaAs nano ring on the magnetic response of the object.
Original languageEnglish
Title of host publication2nd International Symposium on Computational Mechanics 12th International Conference on the Enhancement and Promotion of Computational Methods in Engineering and Science
PublisherAmerican Institute of Physics
Pages952-957
Number of pages6
Volume1233
DOIs
StatePublished - 2010

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