Simulation of 1300-nm In0.4Ga0.6As 0.986N0.014/GaAs1-xnx quantum-well lasers with various GaAs1-xnx strain compensatedZ barriers

Yi An Chang*, Hao-Chung Kuo, Ya Hsien Chang, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this article, the laser performance of the 1300-nm In 0.4Ga0.6As0.986N0.014/GaAs 1 - xNx quantum-well (QW) lasers with various GaAs 1 - xNx strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient T0 values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1 - xNx barrier increases more than 1% the laser performance degrades rapidly and the T0 value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N 0.014 QW and GaAs1 - xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1 - xNx quantum-well lasers are also investigated.

Original languageEnglish
Pages (from-to)195-202
Number of pages8
JournalOptics Communications
Issue number1-3
StatePublished - 1 Nov 2004


  • III-V semiconductors
  • Numerical simulation
  • Optical gain properties
  • Semiconductor lasers

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