Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL

Hsiang Yun Shih, Hao Chung Kuo, Chien Chung Lin, Yu Yun Cho, Shun Chieh Hsu, Yu Ming Huang, Shou Wei Wang, Huang Hsiung Huang, Chao Hsin Wu, Yen Wei Yeh, Yun Ting Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An oxide aperture strained quantum well VCSEL model was built based on measured results. The indium composition of MQW was changed to maximize the frequency response. The simulation result shows that the bandwidth can be improved and reach 30.88GHz.

Original languageEnglish
Title of host publication2019 IEEE Photonics Conference, IPC 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728106151
DOIs
StatePublished - Sep 2019
Event2019 IEEE Photonics Conference, IPC 2019 - San Antonio, United States
Duration: 29 Sep 20193 Oct 2019

Publication series

Name2019 IEEE Photonics Conference, IPC 2019 - Proceedings

Conference

Conference2019 IEEE Photonics Conference, IPC 2019
CountryUnited States
CitySan Antonio
Period29/09/193/10/19

Keywords

  • Bragg reflector
  • fiber
  • Laser
  • Quantum-well
  • wire and -dot devices

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    Shih, H. Y., Kuo, H. C., Lin, C. C., Cho, Y. Y., Hsu, S. C., Huang, Y. M., Wang, S. W., Huang, H. H., Wu, C. H., Yeh, Y. W., & Lu, Y. T. (2019). Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL. In 2019 IEEE Photonics Conference, IPC 2019 - Proceedings [8908386] (2019 IEEE Photonics Conference, IPC 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2019.8908386