The microstructural evolution analysis revealed over-supplied silicon atoms which would form silicon nano-crystallized structure in the amorphous optical films for lower N2O/(N2+NH3) ratio. Silicon oxynitride grown by plasma enhanced chemical vapor deposition (PECVD) is used for the realized application of high contrast waveguide. The profile and the roughness of side and top walls of waveguide reached to the manufacturing criteria of AWG device using the scanning electron microscopy (SEM). The AWG device is successfully fabricated an AWG device with 8 channels and 1.6 nm channel spacing, and the coupling loss and propagation were about -2.24 dB and -0.15 dB.cm.
|Number of pages||12|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 21 Jul 2005|
|Event||Optical Components and Materials II - San Jose, CA, United States|
Duration: 24 Jan 2005 → 25 Jan 2005
- Arrayed waveguide grating (AWG)
- Optical communication