Simulation and fabrication of amorphous silicon rib type arrayed waveguide grating

Wen Jen Liu*, Yen Hsin Cheng, Stven Chen, I. Tsen Lai, Yin-Chieh Lai, Min Hang Weng, Yung Hui Shih, Chung Da Lee

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

The simulation and fabrication of amorphous silicon silicon on Insulator-arrayed waveguide gratings (SOI-AWG) device with 59% extra high refractive index difference (δ) were investigated. The transmission spectrum of AWG's device indicated the insertion loss, crosstalk and side-lobe which were lower than -3.5dB, -25 dB and -45 dB. Selecting index of 3.5012 a-Si and 1.4482 SiO2 as core and bottom cladding layers, with design parameters represented very low loss, crosstalk, and side-lobe transmission spectral by 2D and 3D simulations. Amorphous Si films optical measurements indicated, the refractive index and extinction coefficient of the a-Si films were variable during different argon/silane flow rate and operating vacuum pressure.

Original languageEnglish
Article number41
Pages (from-to)285-296
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5723
DOIs
StatePublished - 22 Jul 2005
EventOptical Components and Materials II - San Jose, CA, United States
Duration: 24 Jan 200525 Jan 2005

Keywords

  • Amorphous Silicon
  • Array Waveguide Grating (AWG)
  • Beam Propagation Method (BPM)
  • DWDM
  • Plasma Enhanced Chemical Vapor Deposition (PECVD)
  • Silicon-on-Insulator (SOI)

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